Realization of memristor using multi-stationary point PSM characteristics

Abstract

ABSTRACT The presence of turning points (stationary points like maxima and minima) in the Parameter-versus-state map (PSM) curve of a memristor can be beneficial in several memristive uses like multi-level logic design, multi-bit memories, and chaos generation circuits. Surprisingly the memristors with these types of PSM curves exhibit multiple crossing points in the transient input v-i contours. In this paper, the memductance model has been derived for such non-linear memristors exhibiting multi-cross-over characteristics. In the presented framework, the coefficients-related condition for the multi-turning point PSM curve has been derived, a necessary condition for the multi-crossing v-i contour. The condition related to the memristor operating parameters has also been reported taking both input signal and initial states into consideration. To realise the derived memductance model corresponding to the three cross-over memristive behaviour, an OTA-based memristor emulator has been developed. Unlike some existing fractional order non-symmetric multi-crossing memristor emulators, the proposed emulator circuit realises an integer order memristor function operating at moderate frequencies. The realised emulator uses only four OTAs and three grounded passive circuit elements with no external multiplier. For the CMOS implementation of employed OTA, the simulation results are obtained to verify the three pinch-off behaviour.