Abstract
We demonstrated and probed interface trap-induced photoelectrochemical sensitization by defect reactions at the TiO2/ZnO interface formed through atomic layer deposition of ZnO. The presence of interfacial defects at the TiO2/ZnO was confirmed through photoluminescence measurement in which green emission was observed. The photoelectrochemical photocurrent (PECP) increased due to interfacial defect-induced charge transfer from ZnO to TiO2 under illumination with a green light, while the PECP decreased under illumination with a solar simulator including UV compared to that without ZnO due to a reduced depletion layer width in the TiO2. We elaborated on the role of the TiO2/ZnO interfacial defects by depleting the total ZnO layer sandwiched by the TiO2/ZnO and the ZnO/electrolyte interfaces, through which the dark current is minimized, and the PECP by interfacial traps is maximized.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
