Abstract
Two-step growth was employed to grow GaN quantum barriers (QBs) in InGaN green LD structures. A cap layer was grown at the same temperature as an InGaN quantum well (QW), and the temperature was then raised by around 130 °C to grow GaN QBs. The effects of low-temperature-grown cap (LT-cap) layers on the optical properties and microstructures of green LD structures were investigated. It was found that the LT-cap layer with an optimal thickness can improve the luminescence homogeneity and suppress the thermal decomposition of InGaN QWs. C-plane ridge waveguide laser diodes lasing above 500 nm were realized.
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