Abstract
The present research reports on a hybrid multifunctional device for UV light detection and non-volatile resistive switching memory based on n-In:ZnO/poly 3,4-ethylene dioxythiophene:polystyrene sulfonate (PEDOT:PSS) junctions. Using a spray pyrolysis method, indium (1–5 at. %) doped ZnO thin films (IZO) were deposited on the pre-heated glass substrate. The structural analysis of IZO thin films shows that all the prepared samples exhibit a hexagonal wurtzite structure with preferential orientation along the (101) plane. The morphological analysis shows a uniform distribution of grains without any voids. The optical transmission spectra reveal that IZO thin films show higher transparency (>90%) in the visible region. With an optimum doping concentration of In (4 at. %), the deposited IZO thin films exhibit high carrier concentration and low electrical resistivity value of 4.58 × 1020 cm−3 and 4.01 × 10−2 Ω cm, respectively. The current–voltage (I–V), photoresponse, and resistive switching behavior of the fabricated n-IZO/PEDOT:PSS-based hybrid device was studied. Under an external reverse bias, the device exhibits a high photoresponsivity (R) value of 0.31 A/W and fast photoresponse switching speed with the measured rise and fall time of 0.08 and 1 s, respectively. It was proposed that the formation/rupture of both anionic and cationic conductive filaments plays a crucial role in the obtained resistive characteristics of the fabricated hybrid device.
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