Abstract
Abstracts In0.024Cd0.976O thin films were inserted between two layers of Ga0.04Zn0.96O films, in an effort to improve the electrical properties of the oxide film. The multilayer structure with an optimum InCdO layer thickness of ∼30 nm showed significantly improved electrical properties without seriously deteriorating the optical properties, with an average optical transmittance of ∼90% over the visible and the NIR range and a resistivity of 7.5 × 10−5 Ω cm. It was also observed that efficiency of the CuInGaSe solar cell devices using the Ga0.04Zn0.96O (50 nm)/In0.024Cd0.976O (30 nm)/Ga0.04Zn0.96O (50 nm) structure as the front electrode shows much higher efficiency (8.5%) than that (4.7%) of the devices with 100 nm Ga0.04Zn0.96O front electrode. This result indicates that the proposed multilayer structure would be a strong candidate for the transparent conducting electrode for the high performance optoelectronic devices.
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