Abstract
In this paper, we report on the fabrication and characterizations of a GaAs-based laser using the epitaxial lateral overgrowth (ELO) technique. ELO is an epitaxial growth technique capable of yielding low-dislocation-density III-V films on Si. To realize the effectivity of this procedure, two types of lasers were fabricated by changing the positions of the top p+-GaAs and metal contact in-line with the ELO layer and in-line with the line seed region. The longer lifetime for the lasers with the top p+-GaAs and metal contact in-line with the ELO layer proves the suitability of the ELO technique.
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