Realization of an InSb bistable device as an optical a n d gate and its use to measure carrier recombination times

Abstract

We report the novel operation of a natural reflectivity InSb bistable resonator at 77 K, pumped with a cw CO laser at 1819 cm−1, as a single pulse detector with definite threshold energy and as an optical AND gate. The two switching pulses for the AND gate logic operation are 30-ps single, switched-out pulses from a mode-locked neodymium: yttrium aluminum garnet (Nd:YAG) laser. Introduction of a variable time delay between the logic pulses provides a unique technique for measurement of the photogenerated carrier lifetime and yields a recombination time ∼90 ns for a cw CO holding intensity ∼80 W/cm2.