Realization of a Planar Water-gated Field Effect Transistor (WG-FET) Using 16-nm-thick Single Crystalline Si Film

Abstract

A water-gated field effect transistor (WG-FET) with 16-nm-thick single crystalline silicon film is realized for the first time and tested with both probe and planar gate electrode structures. Simple and cheap process steps make it suitable for low cost applications. Planar gate electrode topology simplifies the integration of transistors on the same die. Water as gate dielectric provides compatibility with fluidic devices. The transistor works below 1 V and has a threshold voltage, Vth, of -0.18 V for probe gate and -0.09 V for planar gate electrode. On/off ratios for probe and planar gate structures are measured as 14000A/A and 250A/A, respectively.