Abstract
This paper presents a new approach for the realization of RF switches based on the Conductive Bridging Random Access Memory technology (CBRAM). This promising approach allows the realization of RF switches in an extremely simple manner at low cost. For the first time, an RF switch based on a MIM structure is realized with an insulator layer obtained from a commonly used resin deposited by spin coating. The paper reports a RF switch based on CBRAM and demonstrates a device integration onto plastic circuit board (PCB). The realized switch is validated by experimental measurements for a frequency range up to 1.5 GHz with an activation voltage less than 1 V.
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