Abstract
We report on the realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicate that the quantized Hall resistance across an array at a filling factor of 2 is equivalent to 5he2 within the measurement uncertainty of approximately 4 × 10−8. A quantum Hall phase diagram for the array shows that a metrological quantization of 5he2 can be achieved at the magnetic field of 6 T and a temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.
Highlights
This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions
We report on the realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide
Precision measurements with a resistance bridge indicate that the quantized Hall resistance across an array at a within the measurement uncertainty of approximately 4 Â 10À8
Summary
This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions. Precision measurements with a resistance bridge indicate that the quantized Hall resistance across an array at a within the measurement uncertainty of approximately 4 Â 10À8.
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