Abstract
The influence of resistivity for n-AlGaN is investigated by changing Si concentration, growth temperature and growth rate. It is found that the resistivity strongly depended on the growth conditions and it reaches to a small value of 5 × 10−3 Ω cm at the growth temperature of 1040 °C. In addition, it is found that there is a strong correlation between the resistivity and the PL emission intensity of group-III-vacancy–Si (VIII-Si) complexes. It indicates that defect compensation can play a key role in high resistivity of n-AlGaN films.
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