Abstract
Herein, an optoelectrical model is presented for copper indium gallium diselenide (CIGSe) solar cells in COMSOL Multiphysics, capable of multidimensional simulations, and it is applied to ultrathin (500 nm absorber thickness) solar cells. First, the modeling approach is shown. Special attention is paid to back contact materials, interface states, and defect application and their impact on the current–voltage (J–V) characteristics. To address whether the back contact is Schottky or Ohmic, the influence of the Schottky barrier height, recombination velocity, and interface states is shown. Then, the additional application of an acceptor defect gradient at the absorber back and a donor defect density distribution at the p–n junction is investigated. The results of these parameter adjustments are discussed, and the trends are shown to enable fast fitting of experimental J–V curves. Finally, the results are compared to the experimental J–V curves for indium tin oxide and Mo back contact, and challenges encountered are discussed while fitting. The optoelectrical model for CIGSe solar cells, established in two dimensions here, paves the way for comprehensively describing 2D and 3D solar cell structures, e.g., nanotextured or microsolar cells, as well as for considering different absorber thicknesses.
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