Abstract
Real-time X-ray topography is a novel tool to study directly the dynamics of defects and strain fields in solids under various external influences, such as temperature or strain. We describe first the equipment, starting with the rotating anode source up to the video detection system with digital image processing. We present several examples of application to experiments: (a) creation of misfit dislocations during the vapor phase epitaxial growth of Ge on GaAs; (b) dislocation creation and motion in Si; (c) annealing of stresses at the Si/SiO 2 interface; and (d) movement of ferromagnetic domain walls in Fe:Si crystals. An outlook concerning anticipated trends and possible progress in the field of topography (including synchroton sources) concludes this talk.
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