Abstract

Real-time emulation of device-level power electronics plays an essential role in many industrial applications for design and hardware-in-the-loop testing of system components and controllers. Due to the complexity and heavy computational burden of the real-time hardware implementation of the analytical and the numerical models, this paper proposes dynamic electrothermal behavioral models for diode, thyristor, and insulated-gate bipolar transistor based on the Hammerstein configuration. The power electronic device model parameters are extracted from the known device datasheets and implemented in Zynq System-on-Chip platform with accelerated processing for real-time application. An electromagnetic rail gun system has been employed as the study case to compare the performance of the proposed electrothermal behavioral models with that of off-line simulation models on SaberRD software.

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