Abstract
ABSTRACTWe present dynamic structural studies of thin films and their interface with underlying substrates using real-time x-ray diffraction. Using synchrotron light we have observed, in real-time, interface dynamics in semiconductor systems such as GexSi(i−x)/Si. The measurements show that under large temperature changes thin epitaxial layers may behave cooperatively to modify the overall strain profile. Dynamic behavior is exhibited in a series of discontinuities in the perpendicular lattice constant of the overlayer.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
