Abstract
Real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystalline thins films prepared by plasma-enhanced chemical vapor deposition onto Si substrates. RTSE shows that a significant volume fraction of nondiamond (or ${\mathrm{sp}}^{2}$-bonded) carbon forms during thin film coalescence and is trapped near the substrate interface between $\ensuremath{\sim}300\AA{}$ diamond nuclei. Although this behavior is observed over a range of C${\mathrm{H}}_{4}$/${\mathrm{H}}_{2}$/${\mathrm{O}}_{2}$ gas compositions, the interfacial ${\mathrm{sp}}^{2}$-bonded carbon volume can be minimized by operating just within the growth-etch boundary of the diamond growth phase diagram.
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