Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy.

Abstract

Reflectance anisotropy spectroscopy (RAS) is a highly sensitive optical probe for the real-time study of the epitaxial growth of zincblende semiconductors. Here we report on (1) non-equilibrium RAS spectra acquired in real time during the homoepitaxial growth of GaAs, and (2) RAS spectra for GaAs surfaces under equilibrium with several arsenic overpressures. We show that in both cases RAS spectra can be decomposed into two basic components, each with a characteristic line shape. We further show that both dynamic and equilibrium RAS spectra are described by the same pair of basic components. We conclude that the time evolution of non-equilibrium RAS spectra acquired during the epitaxial growth can be described in terms of RAS spectra for equilibrium surfaces. The results reported here should be useful for the interpretation of the physics underlying the rapid time evolution of dynamic RAS spectra during the first monolayer growth. Thus, we show that RAS constitutes a valuable tool for the study of epitaxial growth mechanisms.