Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

Abstract

We describe a modified commercial OMVPE reactor that incorporates quadrupole mass spectrometry (QMS) with a broadband parallel-processing optical spectrometer that simultaneously performs spectroscopic ellipsometry (SE) and reflectance-difference spectroscopy (RDS) measurements. We demonstrate its use by determining the surface temperature of Si to a precision of ±1°C and investigating the initial stages of GaP heteroepitaxy on Si(100). Analysis of the real-time SE data indicates that under our conditions GaP and Si interpenetrate as optically identifiable materials on a thickness scale of 100A.