Abstract
Kinetics of initial oxidation of Si(110)-16x2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ~10^-5-Pa oxygen molecules, the Si(110) surface at 540 deg-C is already covered with 0.3-monolayer oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16x2 reconstruction on this Si(110) surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
