Abstract
We have studied surface deformation due to electron-beam irradiation in strained InGaAs/AlGaAs layers grown on GaAs (100) and (311)B planes in a horizontal low-pressure metalorganic vapor phase epitaxy system at about 800°C. The surface deformation was observed in real time using a high-resolution scanning electron microscope at a magnification of 300,000. The surface deformation occurred from the inside of InGaAs/AlGaAs grown layer under the electron-beam irradiated area with the accelerating voltage of 30 kV and the scanning time ranging from 60 to 120 s. The surface deformation was not consist of amorphous-carbon contamination. The mass transport seems to be caused by the residual strain relaxation due to electron-beam irradiation.
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