Abstract
The vital demand for contemporary industry of real time NDE sensors is in field operation, which often surrounded by harsh electromagnetic environment such as high level EMI fields or high level of X-Ray or nuclear radiation. Contemporary CCD image sensors are highly vulnerable even for 0.5 volt EMI fields and highly vulnerable for x-ray and gamma radiation. The high lever radiation such as 50keV, 100kev, 150keV, 200keV, 300keV, 420keV, is extremely dangerous for human body. CCD image sensors are vulnerable to that radiation level. We proposed doped single crystal 3D image sensor for the real time NDE measurement. Proposed sensor was not vulnerable to electromagnetic field produced by High Voltage Tesla generator and to the high level X-ray radiation: 50keV, 100kev, 150keV 200keV, 300keV, 420keV. Vulnerability and degradation of CCD image sensor to 40keV and 50keV X-Ray radiation was demonstrated and documented. Opportunity to use that sensor for real time NDE of protective coating layers, under high level radiation and EMI fields is discussed.
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