Abstract
We have constructed a new system for real time measurements of crystal growth by glancing angle scattering of fast ions. The system is composed of a microchannel plate, a fluorescence screen and a CCD video camera in order to measure the dynamical change in the angular distribution of the scattered ions during crystal growth. Initial stage of epitaxial growth of lead chalcogenides on SnTe (100) under UHV conditions is studied with the system. Anomalous broadening of the angular distribution of scattered 0.7-MeV He ions is observed when the thickness of the growing layer is between 1 and about 10 nm. From the Monte Carlo simulation of ion trajectories at glancing angle scattering from several model surfaces, this anomaly is attributed to the surface wrinkles caused by a square network of misfit edge dislocations.
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