Abstract
AbstractBismuth, a semi-metal with very long mean free path and large magnetoresistance (MR) effect, is a novel candidate material for thin film spintronic devices. Electrochemical deposition followed by a post-deposition anneal has resulted in highly textured bismuth films as characterized by x-ray diffractometry and pole figure measurements. A highly sensitive, real time in-situ stress measurement system was designed and employed to study stress generation during bismuth film growth. Bismuth films displayed a monotonically increasing compressive stress during deposition. The magnitude of the compressive stress decreased with the deposition rate in the range 1.5 Å/sec to 50 Å/sec.
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