Abstract

Oxygen vacancies are known to play a central role in the optoelectronic properties of oxide perovskites. A detailed description of the exact mechanisms by which oxygen vacancies govern such properties, however, is still quite incomplete. The unambiguous identification of oxygen vacancies has been a subject of intense discussion. Interest in oxygen vacancies is not purely academic. Precise control of oxygen vacancies has potential technological benefits in optoelectronic devices. In this review paper, we focus our attention on the generation of oxygen vacancies by irradiation with high energy particles. Irradiation constitutes an efficient and reliable strategy to introduce, monitor, and characterize oxygen vacancies. Unfortunately, this technique has been underexploited despite its demonstrated advantages. This review revisits the main experimental results that have been obtained for oxygen vacancy centers (a) under high energy electron irradiation (100 keV–1 MeV) in LiNbO3, and (b) during irradiation with high-energy heavy (1–20 MeV) ions in SrTiO3. In both cases, the experiments have used real-time and in situ optical detection. Moreover, the present paper discusses the obtained results in relation to present knowledge from both the experimental and theoretical perspectives. Our view is that a consistent picture is now emerging on the structure and relevant optical features (absorption and emission spectra) of these centers. One key aspect of the topic pertains to the generation of self-trapped electrons as small polarons by irradiation of the crystal lattice and their stabilization by oxygen vacancies. What has been learned by observing the interplay between polarons and vacancies has inspired new models for color centers in dielectric crystals, models which represent an advancement from the early models of color centers in alkali halides and simple oxides. The topic discussed in this review is particularly useful to better understand the complex effects of different types of radiation on the defect structure of those materials, therefore providing relevant clues for nuclear engineering applications.

Highlights

  • Oxides constitute a large family of dielectric compounds that appear in many areas of science and technology from nanoscience to geophysics and from CMOS (Complementary Metal-Oxide-Semiconductor) transistors to astronautics

  • The focus of the present review is on the production, optical identification, and electronic structure of oxygen vacancy centers produced by high-energy particles in LiNbO3 and SrTiO3

  • For LiNbO3, the experimental data on high-energy electron irradiations have shown a link between the displacement of oxygen atoms and the occurrence of these optical transitions, confirming that oxygen vacancies act as efficient traps for small polarons

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Summary

Introduction

Oxides constitute a large family of dielectric compounds that appear in many areas of science and technology from nanoscience to geophysics and from CMOS (Complementary Metal-Oxide-Semiconductor) transistors to astronautics. The oxygen vacancy centers denoted by F+ and F represent an oxygen monovacancy with one trapped electron and an oxygen monovacancy with two trapped electrons, respectively [8] These two centers are considered to be important point defects for many optical and transport properties and, for optoelectronic applications of LiNbO3 and SrTiO3. The focus of the present review is on the production, optical identification, and electronic structure of oxygen vacancy centers produced by high-energy particles in LiNbO3 and SrTiO3. As a consequence of the extensive work performed on a large variety of oxide perovskites, and the new high-energy irradiation experiments, a satisfactory picture for the structure and optical behavior of oxygen vacancies in these materials is possibly emerging. It is expected that the comparative discussion between these two representative materials may provide a further impetus for progress in the field

Oxygen Vacancy Centers in LiNbO3 Created by High-Energy Electron Irradiation
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