Abstract
The growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1–3) in the growing films were detected as stretching and bending absorption bands in P polarization spectra. The dominant absorption band, initially originating from higher hydrides, was shifted to lower wave numbers with an increase of film thickness. A steep rise in absorption intensity at the initial stage and a time delay in SiH emergence are discussed in terms of the enhancement of detection sensitivity in a hydrogen-rich layer and the time needed for the formation of a bulk-network structure, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
