Abstract
Reliable performance in various system operating modes is a substantial requirement in the new power electronics systems and applications. Wide Bandgap-based devices are favorable and appropriate choices for the new EV applications, specially inverter circuits which demands low loss and low parasitic performance in high voltage switching operation. A comprehensive condition monitoring system can have a major contribution in enhancing system reliability and solve the problem of reliability by observing the deterministic parameters in system failure and maintenance. In this paper, a comprehensive condition monitoring technique with a special focus on two major failure mechanisms of SiC MOSFETs is proposed. The results of evaluation tests show that broadening the condition monitoring vision into package-related as well as chip-related domains leads to having a more realistic and accurate monitoring data of the health of the switch during operation.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
