Abstract
We prepared several GeGaSe waveguides with different chemical compositions and measured the change of optical losses induced by light illumination. Together with some experimental data in As2S3 and GeAsSe waveguides, the results showed that maximum change of the optical loss can be observed in the waveguides under bandgap light illumination. The chalcogenide waveguides with close to stoichiometric compositions have less homopolar bonds and less sub-bandgap states, and thus are preferential to have less photoinduced losses.
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