Abstract
The noise due to the spilling of hot electrons out of potential wells and subsequent trapping is calculated. This noise is the real space analogy to the intervalley noise in transfer devices. Our results show that this noise can be important for heterojunction FET's and MOS devices. The Thornber formalism used in our calculation is general and applies for nonstationary cases. Results are given only for the specific case of buried-channel charge-coupled devices because for other devices this type of noise can be derived as a special case.
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