Abstract
The electronic properties of a GaAs/AlGaAs double quantum well field-effect transistor (DQWFET) are studied at 77 and 4.2 K. The channel of the DQWFET consists of two quantum wells with different widths. The channel conductance as a function of the gate voltage indicates the switching of the conductive channel from one quantum well to the other, and the average electron mobility is modulated. In order to confirm the phenomena, photoluminescence (PL) spectra are examined as a function of the gate voltage, which shows a specific variation associated with the anti-crossing of the two quantized levels in the DQW structure.
Published Version
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