Abstract
A real space method to calculate the quasiparticle spectrum near defects in crystalline semiconductors is developed. The quasiparticle spectrum is obtained by means of the self-energy correction to the Hartree-Fock eigenvalues. The calculated valence and lower conduction bands of crystalline silicon are in good agreement with spectroscopic data. The method is applied to interstitial oxygen in silicon, the calculated impurity induced quasiparticle energy levels are in good agreement with experimental data.
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