Abstract
The paper proposes a readout circuit architecture with adjustable integration time for dual-band infrared detectors. The readout circuit uses direct injection to be combined with a capacitive trans-impedance amplifier. The amplifier is sharing between two pixels to reduce the complexity of the readout circuit. The proposed device reduces power consumption and area overhead compared to traditional structures. An experimental chip was fabricated using the TSMC 0.35μm 2P4M 5V process. The resulting unit pixel layout area is 40μm×40μm with input photocurrent ranging from 0.11pA to 50nA. CTIA mode is applicable from 0.11pA to 10nA, while DI mode is applicable from 3.3pA to 50nA. The maximum operating frequency of the chip are 4MHz. The CTIA output swing is 1.2V, the DI output swing is 2V. The signal to noise ratio of the readout circuit is 65dB and power consumption is less than 9.6mW.
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