Abstract
A novel nonvolatile memory technology is needed to meet the increasing demand of large storage elements. Spintronic memristor is a promising candidate for emerging memory technologies. The spintronic memristor combines the non-volatility advantage of memristors, the good scalability, and radiation hardness of spin-transfer torque magnetic random access memories (STT-MRAMs). In this paper, a modified model of the spintronic memristor device is proposed. The model takes into account the read disturbance, and the temperature variation in spintronic memristor-based memory cells.
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