Abstract
Sb anion-substituted gallium nitride films were fabricated by radio frequency reactive sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 atmosphere. n-type GaN films with electron concentration of (1.40 ± 0.1) × 1017 cm−3 inverted to p-type Sb-GaN with hole concentration of (5.50 ± 0.3) × 1017 cm−3. The bandgap energy of Sb anion-added Sb-GaN films decreased from 3.20 to 2.72 eV with increasing Sb concentration. The formation of p-type Sb-GaN is attributed to the formation of Ga vacancy at higher Sb concentration. The coexistence of Sb at the Ga cation site and N anion site is an interesting and important result, as GaNSb had been well developed for highly mismatched alloys. The hetero-junction with p-type Sb-GaN/n-Si diodes was all formed by radio frequency (RF) reactive sputtering technology. The electrical characteristics of Sb-GaN diode devices were investigated from −20 to 20 V at room temperature (RT).
Highlights
Gallium nitride (GaN) is a versatile semiconductors material with wide direct band gap, good thermal conductivity, high breakdown voltage, and high electron mobility [1]
GaN films have been grown by many fabrication methods, including metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy (MOVPE), and molecular beam epitaxy (MBE) [6,7,8]
As the influences of radio frequency (RF) sputtering power and heating temperature on properties of doped GaN films had been well studied in our previous works, the RF sputtering power and substrate temperature in this work were set in 120 W and 300 ◦ C, respectively, with the deposition pressure kept at 9 × 10−3 torr for 30 min and the mixing (Ar + N2 ) gas flow rates at 5 sccm and 15 sccm, respectively
Summary
Gallium nitride (GaN) is a versatile semiconductors material with wide direct band gap, good thermal conductivity, high breakdown voltage, and high electron mobility [1]. Guarneros et al had successfully grown GaN and Mg-GaN films on sapphire substrates with MOCVD, and investigated the optical and electrical properties of n-GaN and p-GaN films [13] They enhanced the electrical characteristics of p-MgGaN films by annealing, resulting in a higher hole concentration of 4.82 ×. Segercrantz further presented the influences of rapid thermal annealing on the structural and electronic properties of GaN1−x Sbx films with x ≥ 0.06 grown by MBE at low temperature. Yu studied GaN1−x Sbx grown on sapphire substrate by MBE at low temperature They found that the growth temperature affected the Sb incorporation and the resulting structural and optical properties of GaN1−x Sbx films [19]. M. Yu studied and reported the composition range, the electronic band, and optical properties of highly mismatched GaN1−x Sbx alloys [22]. The properties of Sb-x-GaN films and the performance of fabricated diode device on n-Si are investigated
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