Abstract
Titanium carbonitride thin films were grown by reactive magnetron sputtering deposition of titanium carbide target in Ar/N2 gas mixture on p-type silicon (100) substrates. With the increase of sputtering power up to 125W, the deposition rate and films thickness reached a maximum of 14nm/min and 430nm, respectively. A thick film of about 2200nm could be deposited for 120 min at the optimum deposition pressure of 20mTorr. Cathode current decreased from about 290mA to reach a value of about 235mA as the N2 flow percentage increased from 0 to 100%. X-ray diffraction analyses of the deposited films confirmed the formation of titanium carbide and carbonitride layers as the nitrogen gas concentrations in the process gas were increased. SEM image of the deposited titanium carbonitride thin film for 5 min deposition time showed that the film started to grow as tiny particles of size as low as about 140nm, which in later stage coalesced together to form bigger grains and finally a continuous film. The deposited film shows good thermal stability upon annealing in air and in vacuum at 700oC for 2 hours.
Highlights
Fabrication of multicomponent nanocomposite films by reactive sputtering technique has been studied by several research groups
In we report on reactive magnetron sputtering deposition of Ti (C,N) thin films using titanium carbide target in Ar/N2 gas mixture
When titanium carbide (TiC) target is sputtered in presence of N2 reactive gas in presence of Ar process gas grey-black color thin films are deposited on Si substrates and the target itself
Summary
Fabrication of multicomponent nanocomposite films by reactive sputtering technique has been studied by several research groups. Despite its great advantages over sputtering compound targets, reactive sputter deposition from metallic targets often exhibit several obstacles in controlling the stoichiometry of the films This is due to instabilities in the reactive gas pressure near the metal-to-compound transition region and differential poisoning of magnetron sputtering cathode target as a result of the formation of an electrically less conductive layer on its surface. Titanium nitride thin films are widely used for a variety of structural as well as functional applications such as wear resistant, decorative and microelectronics applications due to its hardness, lustrous golden yellow color, and good electrical conductivity, and good diffusion barrier characteristics Combining these advantages in one compound might lead to a unique property functional material [9]. The deposited films have been characterized for their crystal structure and chemical composition and the results obtained are explored
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