Abstract
Aluminium nitride thin films were deposited by reactive d.c. magnetron sputtering on various substrates. The analytical tools used to characterise the aluminium nitride thin films were electron beam diffraction, X-ray photoelectron spectroscopy, energy dispersive X-ray analysis and polarised infrared reflection. From these techniques the structure, microstructure, chemical state, percentage content of the elements and IR properties of the films were observed and the formation of the AlN compound was confirmed.
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