Abstract
We have characterized hydrogenated amorphous silicon films prepared by rf diode sputtering in varying partial pressures of Ne, Ar, and Kr. The mechanisms of ion bombardment of growing film surface due to large negative floating potentials at low gas pressures can explain the observed film characteristics. These inert gas effects are in contrast to those seen in inert gas dilution studies of glow discharge decomposition of SiH4. These differences are examined and lead to general conclusions about the effect of bombardment in minimizing microstructure, and in producing electronically-active defects. Other bombardment processes are also discussed.
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