Abstract
Gd-doped AlN film was deposited on Si (222) substrate by Radio frequency reactive sputtering. XRD patterns show that the Gd-doped film maintains the hexagonal wurtzite structure with the (002) preferred c-axis orientation. The deposition film possesses similar smooth surface and homogenous grain size. A broad emission band centered at 444nm is observed and the band could be ascribed to the defects. The results show that Gd is a potential dopant for preparing magneto-electrical devices operating at room temperature.
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