Abstract
Currently, tin oxide (SnO2) is a highly sought-after semiconductor material used in perovskite solar cells (PSCs) because of its good transmittance, the appropriate energy level, high electron mobility, high conductivity, ideal band gap and excellent chemical stability. In this study, SnO2 film was successfully prepared by radio frequency reactive magnetron sputtering (RS) under room temperature conditions. The obtained SnO2 thin films not only exhibited high transmittance in the visible region as well as the pure phase, but also had a suitable energy band structure and lower surface roughness than FTO (SnO2:F) glass substrate, which contributes to the improvement of the adjacent interface morphology. The SnO2 films prepared by reactive sputtering could effectively suppress carrier recombination and act as an electron transport layer. Moreover, the maximum efficiency of the device based on reactive sputtering of SnO2 as the electron transport layer (ETL) for planar perovskite solar cells (PSCs) was 14.63%. This study mainly described the preparation of SnO2 by reactive sputtering under room temperature conditions.
Highlights
Perovskite solar cells (PSCs) are developing rapidly, and the power conversion efficiency (PCE)of these devices have increased from 3.8% [1] to over 20% [2] in a very short time, and continues to be optimized [3]
The band gap of the sputtered SnO2 film was calculated from the transmission spectrum to be 3.79 eV, which is shown in the inset of Figure 2
SnO2 film prepared by reactive sputtering is very suitable for the electron transport layer material, as it effectively improves the crystallization of the perovskite layer, makes the perovskite smaller in size, and has a smoother surface, reduces defects in interface contact
Summary
Perovskite solar cells (PSCs) are developing rapidly, and the power conversion efficiency (PCE). Since the preparation of titanium dioxide needs to undergo a high temperature process, has weak optical stability and low mobility, leading to higher production costs and longer energy recovery times [5], its development is greatly limited [6] On this basis, the fabrication of planar PSCs and electron transport layers has attracted extensive research [7]. The low deposition rate, being time consuming and high cost of making tin oxide electron transport layer by ALD technology limit its application for industrialization [21]. The preparation of SnO2 thin film electron transport layer by radio frequency magnetron reactive sputtering at room temperature and its application to planar PSCs was studied. This paper provides a simpler and more cost-effective method for the application of SnO2 to PSCs, which is conducive to the promotion and application of large areas
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