Abstract
The deposition of CuInSe 2 thin films by co-sputtering from copper and indium planar magnetron sputtering sources in a working gas of argon plus H 2Se is being investigated. Near-stoichiometric coatings deposited onto glass and molybdenum-coated substrates have been found to have resistivities, Hall mobilities, absorption coefficients, band gaps, surface topographies, grain sizes and oxygen heat treatment behavior comparable with those of films produced by the more common three-source evaporation method. However, it has not been possible by reactive sputtering to deposit indium-rich films ([In]/[Cu] ≈ 1.5) of the type commonly used as a top layer in the preparation of two-layer device quality films by the evaporation method. Apparently an indium-rejection behavior, which occurs during the deposition process in H 2Se reactive sputtering, makes it difficult to achieve indium compositions beyond the amount that can be incorporated into the CuInSe 2 chalcopyrite phase. Experiments are described which were conducted to examine the dependence of the indium-rejection behavior on the deposition conditions.
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