Abstract
AlInN films were grown on (0 0 0 1) sapphire and glass substrates by reactive radio-frequency (RF) magnetron sputtering using aluminium and indium targets in an ambience of argon and nitrogen. It was revealed that the Al composition in the AlInN films can be controlled by varying the ratio of the applied RF power of the indium target to that of the aluminium target. The lattice constant for c-axis obtained from the (0 0 0 2) diffraction peak of the AlInN films decreased with the increase of Al composition.
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