Abstract
Epitaxial Si 1− x Ge x x≦0.25 films were reactive ion etched in hydrogen bromide (HBr) plasma. The etch characteristics are similar to single-crystal Si. For understanding SiGe etching characteristics in HBr reactive ion etching (RIE), the etch parameters, such as Ge-content, pressure, and rf power have been studied. The etch rate of SiGe is investigated as the trench depth etching varies with time. It is not only induces the etch rate of SiGe to increase seven times but also keeps the good trench profile increasing the rf power from 50 to 550 W.
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