Abstract
Reactive ion etching of monocrystalline and polycrystalline β-SiC and hydrogenated amorphous a-SiC:H in CF4/O2 mixtures was investigated. The a-SiC:H films, deposited by plasma-enhanced chemical vapor deposition, had the highest etch rate while monocrystalline β-SiC had the lowest etch rate at all compositions of the CF4/O2 mixture. The etch rates for the three materials increased with the addition of oxygen to CF4 and reached a maximum, but the maxima occurred at different compositions due to different rates of oxide formation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
