Abstract
The etching characteristics of (GST) films were studied with a gas mixture using a reactive ion etching system. The variations of etch rates and etch profiles caused by changes in the gas-mixing ratio were investigated under constant pressure and applying power. Then the etching parameters were optimized. The etch rate is up to , and the selectivity of GST to is as high as 3 times. The smooth surface was achieved using optimized etching parameters of oxygen concentration of 4% in the gas mixture, pressure of , and power of .
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