Reactive ion etching of GaAs with SiCl4: A residual damage and electrical investigation

Abstract

AbstractThe residual damage incurred by various SiCl4 reactive ion etching (RIE) conditions was investigated by transmission electron microscopy (TEM), Raman spectroscopy, ion channeling, and electrical characterization methods. Lattice damage to depths greater than 100 nm was incurred in all of the RIE processing situations. The lowest power density, longest etch time RIE exhibited the lowest defect density, roughest surface morphology, and poorest quality GaAs regrowth. The highest power density, shortest etch time RIE displayed the highest defect density, smoothest surface morphology, and highest quality GaAs regrowth. The electrical measurements, Schottky diode characteristics, degraded with decreasing power density and increasing etch times. Overall, the characterization results suggest that the high power density, shortest etch time sample possesses the most desirable properties for device fabrication requirements.