Abstract
GaAs etching rate performed by RIE in CCl2F2 gas has been shown to depend on many parameters: pressure, rf power and flow rate. Moreover addition of Ar in CCl2F2 has been found to increase the etch rate. This observation and the AES study of etched GaAs surfaces has led to the conclusion that volatile chloride species contribute to the etching mechanism, while fluoride species which are less volatile inhibit etching. Schottky diodes presenting an ideality factor of 1.02 have been fabricated on CCl2F2 etched GaAs surface.
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