Abstract
High rate (≤10 μm min−1 ) etching of GaAs, AlxGa1−x As, and GaSb in Cl2/Ar or SiCl4/Ar discharges is reported. The etching was investigated as a function of discharge pressure, power density and composition, and changes in the etching rate of AlxGa1−xAs when SF6 was added to the gas mixtures. Highly anisotropic etching was achieved with SiCl4 for all materials, whereas a greater degree of chemical etching was evident with Cl2. Provided self-biases were ≤50 V, excellent Schottky diode characteristics were exhibited by TiPtAu contacts on SiCl4 or Cl2 etched GaAs surfaces. Energetic-ion bombardment caused carrier compensation up to 2200 Å from the surface in n-type (1017 cm−3 ) GaAs, with this depth being less for lower self-biases. Photoluminescence decreases of 2–25 times were observed after reactive ion etching of GaAs for both types of discharge. Chlorine residues were typically present to a depth of <20 Å after etching, with cleaner surfaces obtained with SiCl4 than with Cl2.
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