Reactive ion etching of ferroelectric SrBi2TaxNb2−xO9 thin films

Abstract

Ferroelectric SrBi2TaxNb2−xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHClFCF3, a special etching gas, known to be less environmentally hazardous compared to the other hydrofluorocarbons, was employed in this study. The etch rates as a function of etching parameters were investigated. An etch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x-ray photoelectron spectroscopy. Surface residues were removed by a postetching cleaning process.