Abstract
Excellent etching characteristics of Al-1%Si-0.5%Cu/TiN film were obtained at low pressure of 0.9 Pa using a magnetically enhanced reactive ion etching system with a rotational permanent magnet. A 2-step resist stripping process was also developed in order to avoid after-corrosion and resist residue. Negative and positive flatband voltage (Vfb) shifts of Al/Si3N4/SiO2/Si capacitor were observed using a static magnetic field, and the Vfb distribution is uniformalized using the rotational magnetic field. We simulated the drift motion of secondary electrons in the cathode sheath in order to clarify the origin of the Vfb distribution. The simulation results showed that the E×B drift motion of the electrons caused the nonuniform distribution of electron density on the wafer, and that this nonuniform distribution of the electrons corresponded to the Vfb distribution.
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