Abstract
Using photoelectron emission at different photon energies we have studied the interaction of gold (up to ten monolayers nominal coverage) deposited at room temperature and at T = 110 K on InP(100)-(4 × 2) surfaces. From the analysis of core-level and valence-band spectra, we derive information on interfacial reactions and overlayer growth modes. At T = 110 K interface disruption is small and we observed a rather homogeneous gold overlayer with only a minute concentration of In after deposition of 10 ML of Au. At T = 300 K severe disruption occurs, and up to 10 ML of Au an In concentration of at least 10% is clearly identified. Annealing to T = 560 K leads to the formation of In x Au 1− x clusters with x up to 0.3.
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