Abstract
Abstract Results are presented for the etching of thermal SiO2 and single crystal Si by two ion beam sources of widely different characteristics, viz. a cold cathode saddle field source and a heated filament source. Reactive ion beam etching in SF6 is described for both sources and chemically assisted ion beam etching (using a specially constructed ring inlet system) in SF6/Ar+ using the heated filament source. Etching rates of Si in the latter mode are dependent on reactive gas partial pressure. Reactive and chemically assisted ion beam etching work in CF4 using the heated filament source is reported. Changes in etch selectivity between Si and SiO2 are observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
